Advanced Semiconductor Fundamentals Solution Manual ⟶
Ic = Is * (exp(VBE/Vt) - 1)
Substituting typical values:
where Vtn is the threshold voltage at zero body bias, γ is the body effect coefficient, φf is the Fermi potential, and Vsb is the source-body voltage. Advanced Semiconductor Fundamentals Solution Manual
μn ≈ 1350 cm^2/Vs μp ≈ 480 cm^2/Vs
3.1 Analyze the current-voltage characteristics of a BJT. Ic = Is * (exp(VBE/Vt) - 1) Substituting
Vbi = (kT/q) * ln(Na * Nd / ni^2)
The current-voltage characteristics of a BJT can be described by the Ebers-Moll model. The collector current can be expressed as: γ is the body effect coefficient
Vth = Vtn + γ * (√(2φf + Vsb) - √(2φf))
The built-in potential barrier in a pn junction can be calculated using the following equation:
